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PD - 94678
HEXFET(R) POWER MOSFET SURFACE MOUNT (LCC-18)
IRF7E3704 20V, N-CHANNEL
Product Summary
Part Number
IRF7E3704 BVDSS
20V
RDS(on) 0.05
ID 12A*
LCC-18
Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
(R)
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 12* 10 48 20 0.16 20 120 12 2.0 1.0 -55 to 150 300 (for 5s) 0.42 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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07/02/03
IRF7E3704
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
20 -- -- -- 1.0 14 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.023 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 0.05 0.055 3.0 -- 20 100 100 -100 22 10 6.0 16 100 26 12 -- V V/C
Test Conditions
V GS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 10A VGS = 4.5V, ID = 10A VDS = VGS, ID = 250A VDS = 10V, IDS = 10A VDS = 20V ,VGS=0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 4.5V, ID = 12A VDS = 10V VDD = 10V, ID = 12A, VGS = 4.5V, RG = 1.8
V S( ) A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 10V f = 1.0MHz f = 1.6MHz, open drain
Ciss C oss C rss RG
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
1850 1005 63 2.6
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12* 48 1.4 50 60
Test Conditions
A
V ns nC Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 16V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 6.25
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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IRF7E3704
100
100
VGS TOP 10V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
3.5V 10
3.5V 10
VGS 10V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP
40s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
40s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
ID , Drain-to-Source Current ( )
1.5
T J = 25C T J = 150C
1.0
0.5
10 3.5 4
VDS = 15V 15 40s PULSE WIDTH 4.5 5 5.5
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7E3704
2800 2400 2000 1600 1200 800 400
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
12
ID = 12A
10
VDS = 16V VDS = 10V
C, Capacitance (pF)
Ciss
8
C oss
6
4
2
C rss
0 1 10 100 0 0 10
FOR TEST CIRCUIT SEE FIGURE 13
30 20 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current ( )
OPERATION IN THIS AREA LIMITED BY R (on) DS
10
T J = 150C
ID, Drain-to-Source Current (A)
100s
T J = 25C
10
1ms
1
0.1 0.2 0.6 1.0 1.4
VGS = 0V 1.8 2.2
1
Tc = 25C Tj = 150C Single Pulse 1 10
10ms
100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF7E3704
16
LIMITED BY PACKAGE
VGS
12
VDS
RD
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
VGS
8
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC)
D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7E3704
300
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
240
TOP BOTTOM ID 5.4A 7.6A 12A
VDS
L
D R IV E R
180
RG
2VGS 0V tp
D .U .T.
IA S
+ - VD D
A
120
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
60
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
4.5V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF7E3704
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 15V, starting TJ = 25C, L = 1.7mH Peak IAS = 12A, VGS =10V, RG = 25
ISD 12A, di/dt 100A/s,
VDD 20V, TJ 150C
Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/03
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